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Vishay Siliconix SI7434DP-T1-E3

Part No. SI7434DP-T1-E3

Manufacturer Vishay Siliconix

Category Transistors - FETs, MOSFETs - Single

Package PowerPAK® SO-8

Datasheet SI7434DP-T1-E3.pdf

Description MOSFET N-CH 250V 2.3A PPAK SO-8

Quantity

RFQ

SI7434DP-T1-E3 Details

Specifications FAQ Shopping Process

Packaging Tape & Reel (TR),Cut Tape (CT)

Series TrenchFET®

ProductStatus Active

FETType N-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 250 V

Current-ContinuousDrain(Id)@25°C 2.3A (Ta)

DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V

RdsOn(Max)@IdVgs 155mOhm @ 3.8A, 10V

Vgs(th)(Max)@Id 4V @ 250µA

GateCharge(Qg)(Max)@Vgs 50 nC @ 10 V

Vgs(Max) ±20V

InputCapacitance(Ciss)(Max)@Vds -

FETFeature -

PowerDissipation(Max) 1.9W (Ta)

OperatingTemperature -55°C ~ 150°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet SI7434DP-T1-E3.pdf

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6. How to contact us for technical support?

Please contact us by email: candy@ebest-hk.com.

SI7434DP-T1-E3 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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