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Vishay Siliconix SI4894BDY-T1-E3

Part No. SI4894BDY-T1-E3

Manufacturer Vishay Siliconix

Category Transistors - FETs, MOSFETs - Single

Package 8-SOIC

Datasheet SI4894BDY-T1-E3.pdf

Description MOSFET N-CH 30V 8.9A 8SO

Quantity

RFQ

SI4894BDY-T1-E3 Details

Specifications FAQ Shopping Process

Packaging Tape & Reel (TR),Cut Tape (CT)

Series TrenchFET®

ProductStatus Active

FETType N-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 30 V

Current-ContinuousDrain(Id)@25°C 8.9A (Ta)

DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V

RdsOn(Max)@IdVgs 11mOhm @ 12A, 10V

Vgs(th)(Max)@Id 3V @ 250µA

GateCharge(Qg)(Max)@Vgs 38 nC @ 10 V

Vgs(Max) ±20V

InputCapacitance(Ciss)(Max)@Vds 1580 pF @ 15 V

FETFeature -

PowerDissipation(Max) 1.4W (Ta)

OperatingTemperature -55°C ~ 150°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet SI4894BDY-T1-E3.pdf

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SI4894BDY-T1-E3 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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