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Vishay Siliconix SI3493BDV-T1-E3

Part No. SI3493BDV-T1-E3

Manufacturer Vishay Siliconix

Category Transistors - FETs, MOSFETs - Single

Package 6-TSOP

Datasheet SI3493BDV-T1-E3.pdf

Description MOSFET P-CH 20V 8A 6TSOP

Quantity

RFQ

SI3493BDV-T1-E3 Details

Specifications FAQ Shopping Process

Packaging Tape & Reel (TR),Cut Tape (CT)

Series TrenchFET®

ProductStatus Active

FETType P-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 20 V

Current-ContinuousDrain(Id)@25°C 8A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V

RdsOn(Max)@IdVgs 27.5mOhm @ 7A, 4.5V

Vgs(th)(Max)@Id 900mV @ 250µA

GateCharge(Qg)(Max)@Vgs 43.5 nC @ 5 V

Vgs(Max) ±8V

InputCapacitance(Ciss)(Max)@Vds 1805 pF @ 10 V

FETFeature -

PowerDissipation(Max) 2.08W (Ta), 2.97W (Tc)

OperatingTemperature -55°C ~ 150°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet SI3493BDV-T1-E3.pdf

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SI3493BDV-T1-E3 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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