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Toshiba Semiconductor and Storage TW070J120B,S1Q

Part No. TW070J120B,S1Q

Manufacturer Toshiba Semiconductor and Storage

Category Transistors - FETs, MOSFETs - Single

Package TO-3P(N)

Datasheet TW070J120B,S1Q.pdf

Description SICFET N-CH 1200V 36A TO3P

Quantity

RFQ

TW070J120B,S1Q Details

Specifications FAQ Shopping Process

Packaging Tube

Series -

ProductStatus Active

FETType N-Channel

Technology SiCFET (Silicon Carbide)

DraintoSourceVoltage(Vdss) 1200 V

Current-ContinuousDrain(Id)@25°C 36A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 20V

RdsOn(Max)@IdVgs 90mOhm @ 18A, 20V

Vgs(th)(Max)@Id 5.8V @ 20mA

GateCharge(Qg)(Max)@Vgs 67 nC @ 20 V

Vgs(Max) ±25V, -10V

InputCapacitance(Ciss)(Max)@Vds 1680 pF @ 800 V

FETFeature Standard

PowerDissipation(Max) 272W (Tc)

OperatingTemperature -55°C ~ 175°C

MountingType Through Hole

Category Transistors - FETs, MOSFETs - Single

Datasheet TW070J120B,S1Q.pdf

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TW070J120B,S1Q Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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