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Toshiba Semiconductor and Storage TPH1R306P1,L1Q

Part No. TPH1R306P1,L1Q

Manufacturer Toshiba Semiconductor and Storage

Category Transistors - FETs, MOSFETs - Single

Package 8-SOP Advance (5x5)

Datasheet TPH1R306P1,L1Q.pdf

Description MOSFET N-CH 60V 100A 8SOP

Quantity

RFQ

TPH1R306P1,L1Q Details

Specifications FAQ Shopping Process

Packaging Tape & Reel (TR),Cut Tape (CT)

Series U-MOSIX-H

ProductStatus Active

FETType N-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 60 V

Current-ContinuousDrain(Id)@25°C 100A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V

RdsOn(Max)@IdVgs 1.28mOhm @ 50A, 10V

Vgs(th)(Max)@Id 2.5V @ 1mA

GateCharge(Qg)(Max)@Vgs 91 nC @ 10 V

Vgs(Max) ±20V

InputCapacitance(Ciss)(Max)@Vds 8100 pF @ 30 V

FETFeature -

PowerDissipation(Max) 960mW (Ta), 170W (Tc)

OperatingTemperature 175°C

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet TPH1R306P1,L1Q.pdf

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TPH1R306P1,L1Q Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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