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Toshiba Semiconductor and Storage TK16A55D(STA4,Q,M)

Part No. TK16A55D(STA4,Q,M)

Manufacturer Toshiba Semiconductor and Storage

Category Transistors - FETs, MOSFETs - Single

Package TO-220SIS

Datasheet TK16A55D(STA4,Q,M).pdf

Description MOSFET N-CH 550V 16A TO220SIS

Quantity

RFQ

TK16A55D(STA4,Q,M) Details

Specifications FAQ Shopping Process

Packaging Tube

Series π-MOSVII

ProductStatus Active

FETType N-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 550 V

Current-ContinuousDrain(Id)@25°C 16A (Ta)

DriveVoltage(MaxRdsOnMinRdsOn) -

RdsOn(Max)@IdVgs 330mOhm @ 8A, 10V

Vgs(th)(Max)@Id 4V @ 1mA

GateCharge(Qg)(Max)@Vgs 45 nC @ 10 V

Vgs(Max) -

InputCapacitance(Ciss)(Max)@Vds 2600 pF @ 25 V

FETFeature -

PowerDissipation(Max) -

OperatingTemperature 150°C (TJ)

MountingType Through Hole

Category Transistors - FETs, MOSFETs - Single

Datasheet TK16A55D(STA4,Q,M).pdf

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TK16A55D(STA4,Q,M) Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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