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Toshiba Semiconductor and Storage RN2116MFV,L3F

Part No. RN2116MFV,L3F

Manufacturer Toshiba Semiconductor and Storage

Category Transistors - Bipolar (BJT) - Single, Pre-Biased

Package SOT-723

Datasheet RN2116MFV,L3F.pdf

Description TRANS PREBIAS PNP 50V 0.1A VESM

Quantity

RFQ

RN2116MFV,L3F Details

Specifications FAQ Shopping Process

Packaging Tape & Reel (TR),Cut Tape (CT)

Series -

ProductStatus Active

TransistorType PNP - Pre-Biased

Current-Collector(Ic)(Max) 100 mA

Voltage-CollectorEmitterBreakdown(Max) 50 V

Resistor-Base(R1) 4.7 kOhms

Resistor-EmitterBase(R2) 10 kOhms

DCCurrentGain(hFE)(Min)@IcVce 50 @ 10mA, 5V

VceSaturation(Max)@IbIc 300mV @ 500µA, 5mA

Current-CollectorCutoff(Max) 500nA

Frequency-Transition -

Power-Max 150 mW

MountingType Surface Mount

Category Transistors - Bipolar (BJT) - Single, Pre-Biased

Datasheet RN2116MFV,L3F.pdf

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RN2116MFV,L3F Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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