Product Details

Toshiba Semiconductor and Storage GT60N321(Q)

Part No. GT60N321(Q)
Package TO-3PL
Description IGBT 1000V 60A 170W TO3P LH
RFQ

GT60N321(Q) Details

Packaging Tube
Series -
ProductStatus Obsolete
IGBTType -
Voltage-CollectorEmitterBreakdown(Max) 1000 V
Current-Collector(Ic)(Max) 60 A
Current-CollectorPulsed(Icm) 120 A
Vce(on)(Max)@VgeIc 2.8V @ 15V, 60A
Power-Max 170 W
SwitchingEnergy -
InputType Standard
GateCharge -
Td(on/off)@25°C 330ns/700ns
TestCondition -
ReverseRecoveryTime(trr) 2.5 µs
OperatingTemperature 150°C (TJ)
MountingType Through Hole

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Part Number Manufacturer Package Description
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