Product Details

Toshiba Semiconductor and Storage GT40QR21(STA1,E,D

Part No. GT40QR21(STA1,E,D
Package TO-3P-3, SC-65-3
Description DISCRETE IGBT TRANSISTOR TO-3PN(
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GT40QR21(STA1,E,D Details

Packaging Tube
Series -
ProductStatus Active
IGBTType -
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 40 A
Current-CollectorPulsed(Icm) 80 A
Vce(on)(Max)@VgeIc 2.7V @ 15V, 40A
Power-Max 230 W
SwitchingEnergy -, 290µJ (off)
InputType Standard
GateCharge -
Td(on/off)@25°C -
TestCondition 280V, 40A, 10Ohm, 20V
ReverseRecoveryTime(trr) 600 ns
OperatingTemperature 175°C (TJ)
MountingType Through Hole

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GT40QR21(STA1,E,D Relevant Information

Part Number Manufacturer Package Description
GT40QR21(STA1,E,D GT40QR21(STA1,E,D PDF GT40QR21(STA1,E,D datasheet GT40QR21(STA1,E,D specification GT40QR21(STA1,E,D image Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage GT40QR21(STA1,E,D buy GT40QR21(STA1,E,D GT40QR21(STA1,E,D price GT40QR21(STA1,E,D distributor GT40QR21(STA1,E,D supplier GT40QR21(STA1,E,D wholesales

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