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Toshiba Semiconductor and Storage GT30J341,Q

Part No. GT30J341,Q

Manufacturer Toshiba Semiconductor and Storage

Category Transistors - IGBTs - Single

Package TO-3P-3, SC-65-3

Datasheet GT30J341,Q.pdf

Description IGBT TRANS 600V 30A TO3PN

Quantity

RFQ

GT30J341,Q Details

Specifications FAQ Shopping Process

Packaging Tray

Series -

ProductStatus Active

IGBTType -

Voltage-CollectorEmitterBreakdown(Max) 600 V

Current-Collector(Ic)(Max) 59 A

Current-CollectorPulsed(Icm) 120 A

Vce(on)(Max)@VgeIc 2V @ 15V, 30A

Power-Max 230 W

SwitchingEnergy 800µJ (on), 600µJ (off)

InputType Standard

GateCharge -

Td(on/off)@25°C 80ns/280ns

TestCondition 300V, 30A, 24Ohm, 15V

ReverseRecoveryTime(trr) 50 ns

OperatingTemperature 175°C (TJ)

MountingType Through Hole

Category Transistors - IGBTs - Single

Datasheet GT30J341,Q.pdf

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