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Taiwan Semiconductor Corporation TSM9N90ECZ C0G

Part No. TSM9N90ECZ C0G

Manufacturer Taiwan Semiconductor Corporation

Category Transistors - FETs, MOSFETs - Single

Package TO-220

Datasheet TSM9N90ECZ C0G.pdf

Description MOSFET N-CHANNEL 900V 9A TO220

Quantity

RFQ

TSM9N90ECZ C0G Details

Specifications FAQ Shopping Process

Packaging Tube

Series -

ProductStatus Obsolete

FETType N-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 900 V

Current-ContinuousDrain(Id)@25°C 9A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 10V

RdsOn(Max)@IdVgs 1.4Ohm @ 4.5A, 10V

Vgs(th)(Max)@Id 4V @ 250µA

GateCharge(Qg)(Max)@Vgs 72 nC @ 10 V

Vgs(Max) ±30V

InputCapacitance(Ciss)(Max)@Vds 2470 pF @ 25 V

FETFeature -

PowerDissipation(Max) 89W (Tc)

OperatingTemperature -55°C ~ 150°C (TJ)

MountingType Through Hole

Category Transistors - FETs, MOSFETs - Single

Datasheet TSM9N90ECZ C0G.pdf

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TSM9N90ECZ C0G Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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