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STMicroelectronics SCTH70N120G2V-7

Part No. SCTH70N120G2V-7

Manufacturer STMicroelectronics

Category Transistors - FETs, MOSFETs - Single

Package H2PAK-7

Datasheet SCTH70N120G2V-7.pdf

Description SILICON CARBIDE POWER MOSFET 120

Quantity

RFQ

SCTH70N120G2V-7 Details

Specifications FAQ Shopping Process

Packaging Tape & Reel (TR),Cut Tape (CT)

Series -

ProductStatus Active

FETType N-Channel

Technology SiCFET (Silicon Carbide)

DraintoSourceVoltage(Vdss) 1200 V

Current-ContinuousDrain(Id)@25°C 90A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 18V

RdsOn(Max)@IdVgs 30mOhm @ 50A, 18V

Vgs(th)(Max)@Id 4.9V @ 1mA

GateCharge(Qg)(Max)@Vgs 150 nC @ 18 V

Vgs(Max) +22V, -10V

InputCapacitance(Ciss)(Max)@Vds 3540 pF @ 800 V

FETFeature -

PowerDissipation(Max) 469W (Tc)

OperatingTemperature -55°C ~ 175°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet SCTH70N120G2V-7.pdf

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SCTH70N120G2V-7 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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