Product Details

Rohm Semiconductor BSM600D12P3G001

Part No. BSM600D12P3G001
Manufacturer Rohm Semiconductor
Package Module
Description 1200V, 576A, HALF BRIDGE, FULL S
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BSM600D12P3G001 Details

Packaging Bulk
Series -
ProductStatus Active
FETType 2 N-Channel (Half Bridge)
FETFeature Silicon Carbide (SiC)
DraintoSourceVoltage(Vdss) 1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C 600A (Tc)
RdsOn(Max)@IdVgs -
Vgs(th)(Max)@Id 5.6V @ 182mA
GateCharge(Qg)(Max)@Vgs -
InputCapacitance(Ciss)(Max)@Vds 31000pF @ 10V
Power-Max 2450W (Tc)
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Chassis Mount

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BSM600D12P3G001 Relevant Information

Part Number Manufacturer Package Description
2N7002DW-TP Micro Commercial Co 6-TSSOP, SC-88, SOT-363 MOSFET 2N-CH 60V 0.115A SOT-363
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BSC0924NDIATMA1 Infineon Technologies 8-PowerTDFN MOSFET 2N-CH 30V 17A/32A TISON8
IRF7324TRPBF Infineon Technologies 8-SOIC (0.154, 3.90mm Width) MOSFET 2P-CH 20V 9A 8-SOIC
BSM600D12P3G001 BSM600D12P3G001 PDF BSM600D12P3G001 datasheet BSM600D12P3G001 specification BSM600D12P3G001 image Rohm Semiconductor Rohm Semiconductor BSM600D12P3G001 buy BSM600D12P3G001 BSM600D12P3G001 price BSM600D12P3G001 distributor BSM600D12P3G001 supplier BSM600D12P3G001 wholesales

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