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Rohm Semiconductor BSM600C12P3G201

Part No. BSM600C12P3G201

Manufacturer Rohm Semiconductor

Category Transistors - FETs, MOSFETs - Single

Package Module

Datasheet BSM600C12P3G201.pdf

Description SICFET N-CH 1200V 600A MODULE

Quantity

RFQ

BSM600C12P3G201 Details

Specifications FAQ Shopping Process

Packaging Tray

Series -

ProductStatus Active

FETType N-Channel

Technology SiCFET (Silicon Carbide)

DraintoSourceVoltage(Vdss) 1200 V

Current-ContinuousDrain(Id)@25°C 600A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) -

RdsOn(Max)@IdVgs -

Vgs(th)(Max)@Id 5.6V @ 182mA

GateCharge(Qg)(Max)@Vgs -

Vgs(Max) +22V, -4V

InputCapacitance(Ciss)(Max)@Vds 28000 pF @ 10 V

FETFeature -

PowerDissipation(Max) 2460W (Tc)

OperatingTemperature 175°C (TJ)

MountingType Chassis Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet BSM600C12P3G201.pdf

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6. How to contact us for technical support?

Please contact us by email: candy@ebest-hk.com.

BSM600C12P3G201 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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