Product Details

Rohm Semiconductor BSM400D12P2G003

Part No. BSM400D12P2G003
Manufacturer Rohm Semiconductor
Package Module
Description SILICON CARBIDE POWER MODULE. B
RFQ

BSM400D12P2G003 Details

Packaging Bulk
Series -
ProductStatus Active
FETType 2 N-Channel (Half Bridge)
FETFeature Silicon Carbide (SiC)
DraintoSourceVoltage(Vdss) 1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C 400A (Tc)
RdsOn(Max)@IdVgs -
Vgs(th)(Max)@Id 4V @ 85mA
GateCharge(Qg)(Max)@Vgs -
InputCapacitance(Ciss)(Max)@Vds 38000pF @ 10V
Power-Max 2450W (Tc)
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType -

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BSM400D12P2G003 Relevant Information

Part Number Manufacturer Package Description
2N7002DW-TP Micro Commercial Co 6-TSSOP, SC-88, SOT-363 MOSFET 2N-CH 60V 0.115A SOT-363
DMC2700UDM-7 Diodes Incorporated SOT-23-6 MOSFET N/P-CH 20V SOT26
BSC0924NDIATMA1 Infineon Technologies 8-PowerTDFN MOSFET 2N-CH 30V 17A/32A TISON8
IRF7324TRPBF Infineon Technologies 8-SOIC (0.154, 3.90mm Width) MOSFET 2P-CH 20V 9A 8-SOIC
BSM400D12P2G003 BSM400D12P2G003 PDF BSM400D12P2G003 datasheet BSM400D12P2G003 specification BSM400D12P2G003 image Rohm Semiconductor Rohm Semiconductor BSM400D12P2G003 buy BSM400D12P2G003 BSM400D12P2G003 price BSM400D12P2G003 distributor BSM400D12P2G003 supplier BSM400D12P2G003 wholesales

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