Product Details

Rohm Semiconductor BSM180D12P3C007

Part No. BSM180D12P3C007
Manufacturer Rohm Semiconductor
Package Module
Description SIC POWER MODULE
RFQ

BSM180D12P3C007 Details

Packaging Bulk
Series -
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Silicon Carbide (SiC)
DraintoSourceVoltage(Vdss) 1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C 180A (Tc)
RdsOn(Max)@IdVgs -
Vgs(th)(Max)@Id 5.6V @ 50mA
GateCharge(Qg)(Max)@Vgs -
InputCapacitance(Ciss)(Max)@Vds 900pF @ 10V
Power-Max 880W
OperatingTemperature 175°C (TJ)
MountingType Surface Mount

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BSM180D12P3C007 Relevant Information

Part Number Manufacturer Package Description
2N7002DW-TP Micro Commercial Co 6-TSSOP, SC-88, SOT-363 MOSFET 2N-CH 60V 0.115A SOT-363
DMC2700UDM-7 Diodes Incorporated SOT-23-6 MOSFET N/P-CH 20V SOT26
BSC0924NDIATMA1 Infineon Technologies 8-PowerTDFN MOSFET 2N-CH 30V 17A/32A TISON8
IRF7324TRPBF Infineon Technologies 8-SOIC (0.154, 3.90mm Width) MOSFET 2P-CH 20V 9A 8-SOIC
BSM180D12P3C007 BSM180D12P3C007 PDF BSM180D12P3C007 datasheet BSM180D12P3C007 specification BSM180D12P3C007 image Rohm Semiconductor Rohm Semiconductor BSM180D12P3C007 buy BSM180D12P3C007 BSM180D12P3C007 price BSM180D12P3C007 distributor BSM180D12P3C007 supplier BSM180D12P3C007 wholesales

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