Product Details

onsemi NXH010P120MNF1PTNG

Part No. NXH010P120MNF1PTNG
Manufacturer onsemi
Package Module
Description PIM F1 SIC HALFBRIDGE 1200V 10MO
RFQ

NXH010P120MNF1PTNG Details

Packaging Tray
Series -
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Silicon Carbide (SiC)
DraintoSourceVoltage(Vdss) 1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C 114A (Tc)
RdsOn(Max)@IdVgs 14mOhm @ 100A, 20V
Vgs(th)(Max)@Id 4.3V @ 40mA
GateCharge(Qg)(Max)@Vgs 454nC @ 20V
InputCapacitance(Ciss)(Max)@Vds 4707pF @ 800V
Power-Max 250W (Tj)
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Chassis Mount

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NXH010P120MNF1PTNG Relevant Information

Part Number Manufacturer Package Description
2N7002DW-TP Micro Commercial Co 6-TSSOP, SC-88, SOT-363 MOSFET 2N-CH 60V 0.115A SOT-363
DMC2700UDM-7 Diodes Incorporated SOT-23-6 MOSFET N/P-CH 20V SOT26
BSC0924NDIATMA1 Infineon Technologies 8-PowerTDFN MOSFET 2N-CH 30V 17A/32A TISON8
IRF7324TRPBF Infineon Technologies 8-SOIC (0.154, 3.90mm Width) MOSFET 2P-CH 20V 9A 8-SOIC
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