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onsemi NTH4L080N120SC1

Part No. NTH4L080N120SC1

Manufacturer onsemi

Category Transistors - FETs, MOSFETs - Single

Package TO-247-4L

Datasheet NTH4L080N120SC1.pdf

Description SICFET N-CH 1200V 29A TO247-4

Quantity

RFQ

NTH4L080N120SC1 Details

Specifications FAQ Shopping Process

Packaging Tube

Series -

ProductStatus Active

FETType N-Channel

Technology SiCFET (Silicon Carbide)

DraintoSourceVoltage(Vdss) 1200 V

Current-ContinuousDrain(Id)@25°C 29A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 20V

RdsOn(Max)@IdVgs 110mOhm @ 20A, 20V

Vgs(th)(Max)@Id 4.3V @ 5mA

GateCharge(Qg)(Max)@Vgs 56 nC @ 20 V

Vgs(Max) +25V, -15V

InputCapacitance(Ciss)(Max)@Vds 1670 pF @ 800 V

FETFeature -

PowerDissipation(Max) 170W (Tc)

OperatingTemperature -55°C ~ 175°C (TJ)

MountingType Through Hole

Category Transistors - FETs, MOSFETs - Single

Datasheet NTH4L080N120SC1.pdf

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NTH4L080N120SC1 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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