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onsemi NTH4L045N065SC1

Part No. NTH4L045N065SC1

Manufacturer onsemi

Category Transistors - FETs, MOSFETs - Single

Package TO-247-4L

Datasheet NTH4L045N065SC1.pdf

Description SILICON CARBIDE MOSFET, NCHANNEL

Quantity

RFQ

NTH4L045N065SC1 Details

Specifications FAQ Shopping Process

Packaging Tube

Series -

ProductStatus Active

FETType N-Channel

Technology SiCFET (Silicon Carbide)

DraintoSourceVoltage(Vdss) 650 V

Current-ContinuousDrain(Id)@25°C 55A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 15V, 18V

RdsOn(Max)@IdVgs 50mOhm @ 25A, 18V

Vgs(th)(Max)@Id 4.3V @ 8mA

GateCharge(Qg)(Max)@Vgs 105 nC @ 18 V

Vgs(Max) +22V, -8V

InputCapacitance(Ciss)(Max)@Vds 1870 pF @ 325 V

FETFeature -

PowerDissipation(Max) 187W (Tc)

OperatingTemperature -55°C ~ 175°C (TJ)

MountingType Through Hole

Category Transistors - FETs, MOSFETs - Single

Datasheet NTH4L045N065SC1.pdf

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NTH4L045N065SC1 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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