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NXP USA Inc. PMZB350UPE,315

Part No. PMZB350UPE,315

Manufacturer NXP USA Inc.

Category Transistors - FETs, MOSFETs - Single

Package DFN1006B-3

Datasheet PMZB350UPE,315.pdf

Description NOW NEXPERIA PMZB350UPE - SMALL

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PMZB350UPE,315 Details

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Packaging Bulk

Series -

ProductStatus Active

FETType P-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 20 V

Current-ContinuousDrain(Id)@25°C 1A (Ta)

DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V

RdsOn(Max)@IdVgs 450mOhm @ 300mA, 4.5V

Vgs(th)(Max)@Id 950mV @ 250µA

GateCharge(Qg)(Max)@Vgs 1.9 nC @ 4.5 V

Vgs(Max) ±8V

InputCapacitance(Ciss)(Max)@Vds 127 pF @ 10 V

FETFeature -

PowerDissipation(Max) 360mW (Ta), 3.125W (Tc)

OperatingTemperature -55°C ~ 150°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet PMZB350UPE,315.pdf

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PMZB350UPE,315 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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