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Infineon Technologies SPD09P06PLGBTMA1

Part No. SPD09P06PLGBTMA1

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package PG-TO252-3

Datasheet SPD09P06PLGBTMA1.pdf

Description MOSFET P-CH 60V 9.7A TO252-3

Quantity

RFQ

SPD09P06PLGBTMA1 Details

Specifications FAQ Shopping Process

Packaging Tape & Reel (TR),Cut Tape (CT)

Series SIPMOS®

ProductStatus Active

FETType P-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 60 V

Current-ContinuousDrain(Id)@25°C 9.7A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V

RdsOn(Max)@IdVgs 250mOhm @ 6.8A, 10V

Vgs(th)(Max)@Id 2V @ 250µA

GateCharge(Qg)(Max)@Vgs 21 nC @ 10 V

Vgs(Max) ±20V

InputCapacitance(Ciss)(Max)@Vds 450 pF @ 25 V

FETFeature -

PowerDissipation(Max) 42W (Tc)

OperatingTemperature -55°C ~ 175°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet SPD09P06PLGBTMA1.pdf

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SPD09P06PLGBTMA1 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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