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Infineon Technologies IPS60R360PFD7SAKMA1

Part No. IPS60R360PFD7SAKMA1

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package PG-TO251-3

Datasheet IPS60R360PFD7SAKMA1.pdf

Description MOSFET N-CH 650V 10A TO251-3

Quantity

RFQ

IPS60R360PFD7SAKMA1 Details

Specifications FAQ Shopping Process

Packaging Tube

Series CoolMOS™PFD7

ProductStatus Active

FETType N-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 650 V

Current-ContinuousDrain(Id)@25°C 10A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 10V

RdsOn(Max)@IdVgs 360mOhm @ 2.9A, 10V

Vgs(th)(Max)@Id 4.5V @ 140µA

GateCharge(Qg)(Max)@Vgs 12.7 nC @ 10 V

Vgs(Max) ±20V

InputCapacitance(Ciss)(Max)@Vds 534 pF @ 400 V

FETFeature -

PowerDissipation(Max) 43W (Tc)

OperatingTemperature -40°C ~ 150°C (TJ)

MountingType Through Hole

Category Transistors - FETs, MOSFETs - Single

Datasheet IPS60R360PFD7SAKMA1.pdf

1. How to find detailed information for IPS60R360PFD7SAKMA1?

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2. How does E-BEST INDUSTRIAL (HK) CO.,LTD ensure product quality?

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Electronic component stock changes frequently. Please submit RFQ or contact our sales team for the latest quotation and availability.

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6. How to contact us for technical support?

Please contact us by email: candy@ebest-hk.com.

IPS60R360PFD7SAKMA1 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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