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Infineon Technologies IPS12CN10LGBKMA1

Part No. IPS12CN10LGBKMA1

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package PG-TO251-3-11

Datasheet IPS12CN10LGBKMA1.pdf

Description MOSFET N-CH 100V 69A TO251-3

Quantity

RFQ

IPS12CN10LGBKMA1 Details

Specifications FAQ Shopping Process

Packaging Tube

Series OptiMOS™

ProductStatus Obsolete

FETType N-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 100 V

Current-ContinuousDrain(Id)@25°C 69A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V

RdsOn(Max)@IdVgs 11.8mOhm @ 69A, 10V

Vgs(th)(Max)@Id 2.4V @ 83µA

GateCharge(Qg)(Max)@Vgs 58 nC @ 10 V

Vgs(Max) ±20V

InputCapacitance(Ciss)(Max)@Vds 5600 pF @ 50 V

FETFeature -

PowerDissipation(Max) 125W (Tc)

OperatingTemperature -55°C ~ 175°C (TJ)

MountingType Through Hole

Category Transistors - FETs, MOSFETs - Single

Datasheet IPS12CN10LGBKMA1.pdf

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6. How to contact us for technical support?

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IPS12CN10LGBKMA1 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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