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Infineon Technologies IPD60R380E6ATMA2

Part No. IPD60R380E6ATMA2

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package PG-TO252-3

Datasheet IPD60R380E6ATMA2.pdf

Description MOSFET N-CH 600V 10.6A TO252-3

Quantity

RFQ

IPD60R380E6ATMA2 Details

Specifications FAQ Shopping Process

Packaging Bulk,Bulk

Series CoolMOS™

ProductStatus Obsolete

FETType N-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 600 V

Current-ContinuousDrain(Id)@25°C 10.6A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 10V

RdsOn(Max)@IdVgs 380mOhm @ 3.8A, 10V

Vgs(th)(Max)@Id 3.5V @ 300µA

GateCharge(Qg)(Max)@Vgs 32 nC @ 10 V

Vgs(Max) ±20V

InputCapacitance(Ciss)(Max)@Vds 700 pF @ 100 V

FETFeature Super Junction

PowerDissipation(Max) 83W (Tc)

OperatingTemperature -55°C ~ 150°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet IPD60R380E6ATMA2.pdf

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IPD60R380E6ATMA2 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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