Product Details

Infineon Technologies IPD110N12N3GATMA1

Part No. IPD110N12N3GATMA1
Manufacturer Infineon Technologies
Package PG-TO252-3
Description MOSFET N-CH 120V 75A TO252-3
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IPD110N12N3GATMA1 Details

Packaging Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 120 V
Current-ContinuousDrain(Id)@25°C 75A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 11mOhm @ 75A, 10V
Vgs(th)(Max)@Id 3V @ 83µA (Typ)
GateCharge(Qg)(Max)@Vgs 65 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4310 pF @ 60 V
FETFeature -
PowerDissipation(Max) 136W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount

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