Product Details

Infineon Technologies IPD079N06L3GBTMA1

Part No. IPD079N06L3GBTMA1
Manufacturer Infineon Technologies
Package PG-TO252-3
Description MOSFET N-CH 60V 50A TO252-3
RFQ

IPD079N06L3GBTMA1 Details

Packaging Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 7.9mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2.2V @ 34µA
GateCharge(Qg)(Max)@Vgs 29 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4900 pF @ 30 V
FETFeature -
PowerDissipation(Max) 79W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount

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