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Infineon Technologies IPB065N15N3GE8187ATMA1

Part No. IPB065N15N3GE8187ATMA1

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package PG-TO263-7

Datasheet IPB065N15N3GE8187ATMA1.pdf

Description MOSFET N-CH 150V 130A TO263-7

Quantity

RFQ

IPB065N15N3GE8187ATMA1 Details

Specifications FAQ Shopping Process

Packaging Tape & Reel (TR),Cut Tape (CT)

Series OptiMOS™

ProductStatus Obsolete

FETType N-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 150 V

Current-ContinuousDrain(Id)@25°C 130A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 8V, 10V

RdsOn(Max)@IdVgs 6.5mOhm @ 100A, 10V

Vgs(th)(Max)@Id 4V @ 270µA

GateCharge(Qg)(Max)@Vgs 93 nC @ 10 V

Vgs(Max) ±20V

InputCapacitance(Ciss)(Max)@Vds 7300 pF @ 75 V

FETFeature -

PowerDissipation(Max) 300W (Tc)

OperatingTemperature -55°C ~ 175°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet IPB065N15N3GE8187ATMA1.pdf

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IPB065N15N3GE8187ATMA1 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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