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Infineon Technologies BSZ086P03NS3EGATMA1

Part No. BSZ086P03NS3EGATMA1

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package PG-TSDSON-8

Datasheet BSZ086P03NS3EGATMA1.pdf

Description MOSFET P-CH 30V 13.5A/40A TSDSON

Quantity

RFQ

BSZ086P03NS3EGATMA1 Details

Specifications FAQ Shopping Process

Packaging Tape & Reel (TR),Cut Tape (CT)

Series OptiMOS™

ProductStatus Active

FETType P-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 30 V

Current-ContinuousDrain(Id)@25°C 13.5A (Ta), 40A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V

RdsOn(Max)@IdVgs 8.6mOhm @ 20A, 10V

Vgs(th)(Max)@Id 3.1V @ 105µA

GateCharge(Qg)(Max)@Vgs 57.5 nC @ 10 V

Vgs(Max) ±25V

InputCapacitance(Ciss)(Max)@Vds 4785 pF @ 15 V

FETFeature -

PowerDissipation(Max) 2.1W (Ta), 69W (Tc)

OperatingTemperature -55°C ~ 150°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet BSZ086P03NS3EGATMA1.pdf

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BSZ086P03NS3EGATMA1 Relevant Information

Part Number Manufacturer Package Description

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