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Infineon Technologies BSC12DN20NS3GATMA1

Part No. BSC12DN20NS3GATMA1

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package PG-TDSON-8-5

Datasheet BSC12DN20NS3GATMA1.pdf

Description MOSFET N-CH 200V 11.3A 8TDSON

Quantity

RFQ

BSC12DN20NS3GATMA1 Details

Specifications FAQ Shopping Process

Packaging Tape & Reel (TR),Cut Tape (CT)

Series OptiMOS™

ProductStatus Active

FETType N-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 200 V

Current-ContinuousDrain(Id)@25°C 11.3A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 10V

RdsOn(Max)@IdVgs 125mOhm @ 5.7A, 10V

Vgs(th)(Max)@Id 4V @ 25µA

GateCharge(Qg)(Max)@Vgs 8.7 nC @ 10 V

Vgs(Max) ±20V

InputCapacitance(Ciss)(Max)@Vds 680 pF @ 100 V

FETFeature -

PowerDissipation(Max) 50W (Tc)

OperatingTemperature -55°C ~ 150°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet BSC12DN20NS3GATMA1.pdf

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BSC12DN20NS3GATMA1 Relevant Information

Part Number Manufacturer Package Description

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