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Infineon Technologies BSC080N12LSGATMA1

Part No. BSC080N12LSGATMA1

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package PG-TDSON-8

Datasheet BSC080N12LSGATMA1.pdf

Description TRENCH >=100V PG-TDSON-8

Quantity

RFQ

BSC080N12LSGATMA1 Details

Specifications FAQ Shopping Process

Packaging Tape & Reel (TR),Cut Tape (CT)

Series OptiMOS™

ProductStatus Active

FETType N-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 120 V

Current-ContinuousDrain(Id)@25°C 12A (Ta), 99A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V

RdsOn(Max)@IdVgs 8mOhm @ 50A, 10V

Vgs(th)(Max)@Id 2.4V @ 112µA

GateCharge(Qg)(Max)@Vgs 79 nC @ 10 V

Vgs(Max) ±20V

InputCapacitance(Ciss)(Max)@Vds 7400 pF @ 60 V

FETFeature -

PowerDissipation(Max) 156W (Tc)

OperatingTemperature -55°C ~ 150°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet BSC080N12LSGATMA1.pdf

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BSC080N12LSGATMA1 Relevant Information

Part Number Manufacturer Package Description

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