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Infineon Technologies BSB012N03LX3G

Part No. BSB012N03LX3G

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package MG-WDSON-2, CanPAK M™

Datasheet BSB012N03LX3G.pdf

Description N-CHANNEL POWER MOSFET

Quantity

RFQ

BSB012N03LX3G Details

Specifications FAQ Shopping Process

Packaging Bulk

Series OptiMOS™

ProductStatus Active

FETType N-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 30 V

Current-ContinuousDrain(Id)@25°C 39A (Ta), 180A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V

RdsOn(Max)@IdVgs 1.2mOhm @ 30A, 10V

Vgs(th)(Max)@Id 2.2V @ 250µA

GateCharge(Qg)(Max)@Vgs 169 nC @ 10 V

Vgs(Max) ±20V

InputCapacitance(Ciss)(Max)@Vds 16900 pF @ 15 V

FETFeature -

PowerDissipation(Max) 2.8W (Ta), 89W (Tc)

OperatingTemperature -40°C ~ 150°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet BSB012N03LX3G.pdf

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6. How to contact us for technical support?

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BSB012N03LX3G Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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