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Infineon Technologies BSB008NE2LXXUMA1

Part No. BSB008NE2LXXUMA1

Manufacturer Infineon Technologies

Category Transistors - FETs, MOSFETs - Single

Package MG-WDSON-2, CanPAK M™

Datasheet BSB008NE2LXXUMA1.pdf

Description MOSFET N-CH 25V 46A/180A 2WDSON

Quantity

RFQ

BSB008NE2LXXUMA1 Details

Specifications FAQ Shopping Process

Packaging Tape & Reel (TR),Cut Tape (CT)

Series OptiMOS™

ProductStatus Obsolete

FETType N-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 25 V

Current-ContinuousDrain(Id)@25°C 46A (Ta), 180A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V

RdsOn(Max)@IdVgs 0.8mOhm @ 30A, 10V

Vgs(th)(Max)@Id 2V @ 250µA

GateCharge(Qg)(Max)@Vgs 343 nC @ 10 V

Vgs(Max) ±20V

InputCapacitance(Ciss)(Max)@Vds 16000 pF @ 12 V

FETFeature -

PowerDissipation(Max) 2.8W (Ta), 89W (Tc)

OperatingTemperature -40°C ~ 150°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet BSB008NE2LXXUMA1.pdf

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BSB008NE2LXXUMA1 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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