Product Details

Global Power Technology-GPT G3S12010BM

Part No. G3S12010BM
Package TO-247-3
Description SIC SCHOTTKY DIODE 1200V 10A 3-P
RFQ

G3S12010BM Details

Packaging Cut Tape (CT),Tape & Box (TB)
Series -
ProductStatus Active
DiodeConfiguration 1 Pair Common Cathode
DiodeType Silicon Carbide Schottky
Voltage-DCReverse(Vr)(Max) 1200 V
Current-AverageRectified(Io)(perDiode) 19.8A (DC)
Voltage-Forward(Vf)(Max)@If 1.7 V @ 5 A
Speed No Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr) 0 ns
Current-ReverseLeakage@Vr 50 µA @ 1200 V
OperatingTemperature-Junction -55°C ~ 175°C
MountingType Through Hole

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G3S12010BM Relevant Information

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