Product Details

Global Power Technology-GPT G3S06510B

Part No. G3S06510B
Package TO-247-3
Datasheet G3S06510B.pdf
Description SIC SCHOTTKY DIODE 650V 10A 3-PI
RFQ

G3S06510B Details

Packaging Cut Tape (CT),Tape & Box (TB)
Series -
ProductStatus Active
DiodeConfiguration 1 Pair Common Cathode
DiodeType Silicon Carbide Schottky
Voltage-DCReverse(Vr)(Max) 650 V
Current-AverageRectified(Io)(perDiode) 27A (DC)
Voltage-Forward(Vf)(Max)@If 1.7 V @ 5 A
Speed No Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr) 0 ns
Current-ReverseLeakage@Vr 50 µA @ 650 V
OperatingTemperature-Junction -55°C ~ 175°C
MountingType Through Hole
Datasheet G3S06510B.pdf

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