Product Details

GeneSiC Semiconductor MBR20030CT

Part No. MBR20030CT
Manufacturer GeneSiC Semiconductor
Package Twin Tower
Description DIODE MODULE 30V 200A 2TOWER
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MBR20030CT Details

Packaging Bulk
Series -
ProductStatus Active
DiodeConfiguration 1 Pair Common Cathode
DiodeType Schottky
Voltage-DCReverse(Vr)(Max) 30 V
Current-AverageRectified(Io)(perDiode) 200A (DC)
Voltage-Forward(Vf)(Max)@If 650 mV @ 100 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr) -
Current-ReverseLeakage@Vr 5 mA @ 20 V
OperatingTemperature-Junction -55°C ~ 150°C
MountingType Chassis Mount

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MBR20030CT Relevant Information

Part Number Manufacturer Package Description
BAV99W,115 NXP Semiconductors - NEXPERIA BAV99 - DUAL HIGH-SPEED
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