Product Details

Fairchild Semiconductor HGTP12N60A4D

Part No. HGTP12N60A4D
Package TO-220-3
Description INSULATED GATE BIPOLAR TRANSISTO
RFQ

HGTP12N60A4D Details

Packaging Bulk
Series -
ProductStatus Active
IGBTType -
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 54 A
Current-CollectorPulsed(Icm) 96 A
Vce(on)(Max)@VgeIc 2.7V @ 15V, 12A
Power-Max 167 W
SwitchingEnergy 55µJ (on), 50µJ (off)
InputType Standard
GateCharge 78 nC
Td(on/off)@25°C 17ns/96ns
TestCondition 390V, 12A, 10Ohm, 15V
ReverseRecoveryTime(trr) 30 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole

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HGTP12N60A4D HGTP12N60A4D PDF HGTP12N60A4D datasheet HGTP12N60A4D specification HGTP12N60A4D image Fairchild Semiconductor Fairchild Semiconductor HGTP12N60A4D buy HGTP12N60A4D HGTP12N60A4D price HGTP12N60A4D distributor HGTP12N60A4D supplier HGTP12N60A4D wholesales

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