Product Details

EPC EPC2110ENGRT

Part No. EPC2110ENGRT
Manufacturer EPC
Package Die
Description GAN TRANS 2N-CH 120V BUMPED DIE
RFQ

EPC2110ENGRT Details

Packaging Tape & Reel (TR),Cut Tape (CT)
Series eGaN®
ProductStatus Active
FETType 2 N-Channel (Dual) Common Source
FETFeature GaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss) 120V
Current-ContinuousDrain(Id)@25°C 3.4A
RdsOn(Max)@IdVgs 60mOhm @ 4A, 5V
Vgs(th)(Max)@Id 2.5V @ 700µA
GateCharge(Qg)(Max)@Vgs 0.8nC @ 5V
InputCapacitance(Ciss)(Max)@Vds 80pF @ 60V
Power-Max -
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount

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EPC2110ENGRT Relevant Information

Part Number Manufacturer Package Description
2N7002DW-TP Micro Commercial Co 6-TSSOP, SC-88, SOT-363 MOSFET 2N-CH 60V 0.115A SOT-363
DMC2700UDM-7 Diodes Incorporated SOT-23-6 MOSFET N/P-CH 20V SOT26
BSC0924NDIATMA1 Infineon Technologies 8-PowerTDFN MOSFET 2N-CH 30V 17A/32A TISON8
IRF7324TRPBF Infineon Technologies 8-SOIC (0.154, 3.90mm Width) MOSFET 2P-CH 20V 9A 8-SOIC
EPC2110ENGRT EPC2110ENGRT PDF EPC2110ENGRT datasheet EPC2110ENGRT specification EPC2110ENGRT image EPC EPC EPC2110ENGRT buy EPC2110ENGRT EPC2110ENGRT price EPC2110ENGRT distributor EPC2110ENGRT supplier EPC2110ENGRT wholesales

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