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Diodes Incorporated DMN10H100SK3-13

Part No. DMN10H100SK3-13

Manufacturer Diodes Incorporated

Category Transistors - FETs, MOSFETs - Single

Package TO-252-3

Datasheet DMN10H100SK3-13.pdf

Description MOSFET N-CH 100V 18A TO252

Quantity

RFQ

DMN10H100SK3-13 Details

Specifications FAQ Shopping Process

Packaging Tape & Reel (TR),Cut Tape (CT)

Series -

ProductStatus Active

FETType N-Channel

Technology MOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss) 100 V

Current-ContinuousDrain(Id)@25°C 18A (Tc)

DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V

RdsOn(Max)@IdVgs 80mOhm @ 3.3A, 10V

Vgs(th)(Max)@Id 3V @ 250µA

GateCharge(Qg)(Max)@Vgs 25.2 nC @ 10 V

Vgs(Max) ±20V

InputCapacitance(Ciss)(Max)@Vds 1172 pF @ 50 V

FETFeature -

PowerDissipation(Max) 37W (Tc)

OperatingTemperature -55°C ~ 150°C (TJ)

MountingType Surface Mount

Category Transistors - FETs, MOSFETs - Single

Datasheet DMN10H100SK3-13.pdf

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DMN10H100SK3-13 Relevant Information

Part Number Manufacturer Package Description

TAS3108DCP MAX5440EAG+ INA1651QPWRQ1 DRV134UA DIR9001PW DIT4192IPW ZL38051LDF1 PCM9211PT DIT4096IPW NAU8220WG DIR9001PWR

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