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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STW12N120K5MOSFET N-CH 1200V 12A TO247 |
2,101 | 11.16 |
RFQ |
Datasheet |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STW12N150K5MOSFET N-CH 1500V 7A TO247 |
2,642 | 11.64 |
RFQ |
Datasheet |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 5V @ 100µA | 47 nC @ 10 V | ±30V | 1360 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STW65N65DM2AGMOSFET N-CH 650V 60A TO247 |
2,972 | 11.66 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101, MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±25V | 5500 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SCT10N120SICFET N-CH 1200V 12A HIP247 |
2,148 | 12.35 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 12A (Tc) | 20V | 690mOhm @ 6A, 20V | 3.5V @ 250µA | 22 nC @ 20 V | +25V, -10V | 290 pF @ 400 V | - | 150W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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STW56N60DM2MOSFET N-CH 600V 50A TO247 |
3,950 | 12.68 |
RFQ |
Datasheet |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 60mOhm @ 25A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±25V | 4100 pF @ 100 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SCT20N120HSICFET N-CH 1200V 20A H2PAK-2 |
2,964 | 16.43 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 290mOhm @ 10A, 20V | 3.5V @ 1mA | 45 nC @ 20 V | +25V, -10V | 650 pF @ 400 V | - | 175W (Tc) | -55°C ~ 200°C (TJ) | Surface Mount |
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STW45NM50MOSFET N-CH 500V 45A TO247-3 |
2,859 | 12.95 |
RFQ |
Datasheet |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 45A (Tc) | 10V | 100mOhm @ 22.5A, 10V | 5V @ 250µA | 117 nC @ 10 V | ±30V | 3700 pF @ 25 V | - | 417W (Tc) | -65°C ~ 150°C (TJ) | Through Hole |
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STP45N65M5MOSFET N-CH 650V 35A TO220 |
2,528 | 9.03 |
RFQ |
Datasheet |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 78mOhm @ 19.5A, 10V | 5V @ 250µA | 91 nC @ 10 V | ±25V | 3375 pF @ 100 V | - | 210W (Tc) | 150°C (TJ) | Through Hole |
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STW70N60M2MOSFET N-CH 600V 68A TO247 |
3,294 | 13.54 |
RFQ |
Datasheet |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 68A (Tc) | 10V | 40mOhm @ 34A, 10V | 4V @ 250µA | 118 nC @ 10 V | ±25V | 5200 pF @ 100 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STF12N120K5MOSFET N-CH 1200V 12A TO220FP |
2,718 | 13.71 |
RFQ |
Datasheet |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STW45NM60MOSFET N-CH 650V 45A TO247-3 |
2,569 | 14.67 |
RFQ |
Datasheet |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 110mOhm @ 22.5A, 10V | 5V @ 250µA | 134 nC @ 10 V | ±30V | 3800 pF @ 25 V | - | 417W (Tc) | 150°C (TJ) | Through Hole |
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STW26NM50MOSFET N-CH 500V 30A TO247-3 |
3,243 | 11.77 |
RFQ |
Datasheet |
Tube | MDmesh™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 120mOhm @ 13A, 10V | 5V @ 250µA | 106 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 313W (Tc) | 150°C (TJ) | Through Hole |
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STW88N65M5MOSFET N-CH 650V 84A TO247-3 |
2,851 | 18.90 |
RFQ |
Datasheet |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 84A (Tc) | 10V | 29mOhm @ 42A, 10V | 5V @ 250µA | 204 nC @ 10 V | ±25V | 8825 pF @ 100 V | - | 450W (Tc) | 150°C (TJ) | Through Hole |
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SCTWA35N65G2VTRANS SJT N-CH 650V 45A TO247 |
3,733 | 19.57 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 72mOhm @ 20A, 20V | 3.2V @ 1mA | 73 nC @ 20 V | +20V, -5V | 73000 pF @ 400 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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STY105NM50NMOSFET N-CH 500V 110A MAX247 |
3,239 | 26.97 |
RFQ |
Datasheet |
Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 110A (Tc) | 10V | 22mOhm @ 52A, 10V | 4V @ 250µA | 326 nC @ 10 V | ±25V | 9600 pF @ 100 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SCTW90N65G2VSICFET N-CH 650V 90A HIP247 |
2,481 | 38.02 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 90A (Tc) | 18V | 25mOhm @ 50A, 18V | 5V @ 250µA | 157 nC @ 18 V | +22V, -10V | 3300 pF @ 400 V | - | 390W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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SCTWA50N120SICFET N-CH 1200V 65A HIP247 |
3,971 | 38.53 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tc) | 20V | 69mOhm @ 40A, 20V | 3V @ 1mA | 122 nC @ 20 V | +25V, -10V | 1900 pF @ 400 V | - | 318W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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STY139N65M5MOSFET N-CH 650V 130A MAX247 |
2,410 | 38.59 |
RFQ |
Datasheet |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 130A (Tc) | 10V | 17mOhm @ 65A, 10V | 5V @ 250µA | 363 nC @ 10 V | ±25V | 15600 pF @ 100 V | - | 625W (Tc) | 150°C (TJ) | Through Hole |
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SCTW100N65G2AGSICFET N-CH 650V 100A HIP247 |
2,139 | 39.56 |
RFQ |
Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 100A (Tc) | 18V | 26mOhm @ 50A, 18V | 5V @ 5mA | 162 nC @ 18 V | +22V, -10V | 3315 pF @ 520 V | - | 420W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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STY145N65M5MOSFET N-CH 650V 138A MAX247 |
3,586 | 48.63 |
RFQ |
Datasheet |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 138A (Tc) | 10V | 15mOhm @ 69A, 10V | 5V @ 250µA | 414 nC @ 10 V | ±25V | 18500 pF @ 100 V | - | 625W (Tc) | 150°C (TJ) | Through Hole |
