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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHG22N60EF-GE3MOSFET N-CH 600V 19A TO247AC |
474 | 4.45 |
RFQ |
Datasheet |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 182mOhm @ 11A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1423 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFBC40ASTRLPBFMOSFET N-CH 600V 6.2A D2PAK |
200 | 4.66 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 1036 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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|
SIHB22N65E-T1-GE3N-CHANNEL 650V |
797 | 5.04 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±30V | 2415 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHA100N60E-GE3MOSFET N-CH 600V 30A TO220 |
926 | 5.27 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 100mOhm @ 13A, 10V | 5V @ 250µA | 50 nC @ 10 V | ±30V | 1851 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHP16N50C-BE3MOSFET N-CH 500V 16A TO220AB |
997 | 6.12 |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
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|
SIHB24N65EFT1-GE3N-CHANNEL 650V |
493 | 6.30 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 156mOhm @ 12A, 10V | 4V @ 250µA | 122 nC @ 10 V | ±30V | 2774 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHB30N60ET1-GE3N-CHANNEL 600V |
684 | 6.35 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHW30N60E-GE3MOSFET N-CH 600V 29A TO247AD |
159 | 6.70 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 2600 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHB16N50C-E3MOSFET N-CH 500V 16A D2PAK |
990 | 6.76 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHH24N65E-T1-GE3MOSFET N-CH 650V 23A PPAK 8 X 8 |
821 | 7.13 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 23A (Tc) | 10V | 150mOhm @ 12A, 10V | 4V @ 250µA | 116 nC @ 10 V | ±30V | 2814 pF @ 100 V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHH21N65EF-T1-GE3MOSFET N-CH 650V 19.8A PPAK 8X8 |
675 | 7.13 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 19.8A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 102 nC @ 10 V | ±30V | 2396 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF830PBF-BE3MOSFET N-CH 500V 4.5A TO220AB |
2,732 | 1.66 |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 610 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
IRFD9120PBFMOSFET P-CH 100V 1A 4DIP |
547 | 1.92 |
RFQ |
Datasheet |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | 10V | 600mOhm @ 600mA, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IRF610PBF-BE3MOSFET N-CH 200V 3.3A TO220AB |
255 | 0.98 |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
IRLR014PBFMOSFET N-CH 60V 7.7A DPAK |
733 | 1.10 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | 2V @ 250µA | 8.4 nC @ 5 V | ±10V | 400 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF510PBF-BE3MOSFET N-CH 100V 5.6A TO220AB |
797 | 1.17 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.6A (Tc) | - | 540mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF830BPBFMOSFET N-CH 500V 5.3A TO220AB |
371 | 1.17 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±30V | 325 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF520PBF-BE3MOSFET N-CH 100V 9.2A TO220AB |
362 | 1.23 |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.2A (Tc) | 10V | 270mOhm @ 5.5A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
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IRF620PBF-BE3MOSFET N-CH 200V 5.2A TO220AB |
178 | 1.23 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.2A (Tc) | - | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF720PBFMOSFET N-CH 400V 3.3A TO220AB |
196 | 1.35 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.3A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 410 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
