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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF730SPBFMOSFET N-CH 400V 5.5A D2PAK |
3,435 | 1.27 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF830LPBFMOSFET N-CH 500V 4.5A TO262-3 |
3,292 | 1.27 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 610 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIR872ADP-T1-RE3MOSFET N-CH 150V 53.7A PPAK SO-8 |
2,046 | 1.27 |
RFQ |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 53.7A (Tc) | 7.5V, 10V | 18mOhm @ 20A, 10V | 4.5V @ 250µA | 47 nC @ 10 V | ±20V | 1286 pF @ 75 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
SIHB4N80E-GE3MOSFET N-CH 800V 4.3A D2PAK |
3,520 | 1.27 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 622 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHB12N60ET1-GE3MOSFET N-CH 600V 12A TO263 |
3,113 | 1.29 |
RFQ |
Bulk | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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SIHB12N60ET5-GE3MOSFET N-CH 600V 12A TO263 |
2,795 | 1.29 |
RFQ |
Bulk | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
SIDR608DP-T1-RE3MOSFET N-CH 45V 51A/208A PPAK |
2,636 | 1.29 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 51A (Ta), 208A (Tc) | 4.5V, 10V | 1.2mOhm @ 20A, 10V | 2.3V @ 250µA | 167 nC @ 10 V | +20V, -16V | 8900 pF @ 20 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHP6N80E-GE3MOSFET N-CH 800V 5.4A TO220AB |
3,757 | 1.30 |
RFQ |
Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±30V | 827 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHF6N65E-GE3MOSFET N-CH 650V 7A TO220 |
2,344 | 1.30 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48 nC @ 10 V | ±30V | 820 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRFBF20LPBFMOSFET N-CH 900V 1.7A I2PAK |
3,025 | 1.32 |
RFQ |
Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 3.1W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIE882DF-T1-GE3MOSFET N-CH 25V 60A 10POLARPAK |
3,291 | 2.63 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 60A (Tc) | 4.5V, 10V | 1.4mOhm @ 20A, 10V | 2.2V @ 250µA | 145 nC @ 10 V | ±20V | 6400 pF @ 12.5 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF9520STRRPBFMOSFET P-CH 100V 6.8A D2PAK |
3,516 | 1.35 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.8A (Tc) | 10V | 600mOhm @ 4.1A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIDR402DP-T1-GE3MOSFET N-CH 40V 64.6A/100A PPAK |
3,869 | 1.36 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 64.6A (Ta), 100A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 2.3V @ 250µA | 165 nC @ 10 V | +20V, -16V | 9100 pF @ 20 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF9Z24STRLPBFMOSFET P-CH 60V 11A D2PAK |
3,858 | 1.36 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Tc) | 10V | 280mOhm @ 6.6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IRF9Z24STRRPBFMOSFET P-CH 60V 11A D2PAK |
2,132 | 1.36 |
RFQ |
Datasheet |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Tc) | 10V | 280mOhm @ 6.6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SIHJ7N65E-T1-GE3MOSFET N-CH 650V 7.9A PPAK SO-8 |
3,088 | 2.69 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.9A (Tc) | 10V | 598mOhm @ 3.5A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±30V | 820 pF @ 100 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI7636DP-T1-GE3MOSFET N-CH 30V 17A PPAK SO-8 |
3,656 | 1.39 |
RFQ |
Datasheet |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta) | 4.5V, 10V | 4mOhm @ 25A, 10V | 3V @ 250µA | 50 nC @ 4.5 V | ±20V | 5600 pF @ 15 V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF9620SPBFMOSFET P-CH 200V 3.5A D2PAK |
2,132 | 1.42 |
RFQ |
Datasheet |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 3.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI4413ADY-T1-GE3MOSFET P-CH 30V 10.5A 8SO |
3,282 | 1.42 |
RFQ |
Datasheet |
Tape & Reel (TR) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10.5A (Ta) | 4.5V, 10V | 7.5mOhm @ 13A, 10V | 3V @ 250µA | 95 nC @ 5 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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|
SI4423DY-T1-GE3MOSFET P-CH 20V 10A 8SO |
2,012 | 1.42 |
RFQ |
Datasheet |
Tape & Reel (TR) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 10A (Ta) | 1.8V, 4.5V | 7.5mOhm @ 14A, 4.5V | 900mV @ 600µA | 175 nC @ 5 V | ±8V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
