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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
US1DHM2G

US1DHM2G

DIODE GEN PURP 200V 1A DO214AC

Taiwan Semiconductor Corporation

2,693 0.09

RFQ

US1DHM2G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
US1GHM2G

US1GHM2G

DIODE GEN PURP 400V 1A DO214AC

Taiwan Semiconductor Corporation

3,199 0.09

RFQ

US1GHM2G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
US1JHM2G

US1JHM2G

DIODE GEN PURP 600V 1A DO214AC

Taiwan Semiconductor Corporation

2,027 0.09

RFQ

US1JHM2G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 75 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
1N5404GHR0G

1N5404GHR0G

DIODE GEN PURP 400V 3A DO201AD

Taiwan Semiconductor Corporation

3,098 0.13

RFQ

1N5404GHR0G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 3A -55°C ~ 150°C 1 V @ 3 A
SF28GHR0G

SF28GHR0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

2,385 0.13

RFQ

SF28GHR0G

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.7 V @ 2 A
SS310 V6G

SS310 V6G

DIODE SCHOTTKY 3A 100V DO-214AB

Taiwan Semiconductor Corporation

2,918 0.15

RFQ

SS310 V6G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 3A -55°C ~ 150°C -
RSFBLHRVG

RSFBLHRVG

DIODE GEN PURP 100V 500MA SUBSMA

Taiwan Semiconductor Corporation

3,246 0.18

RFQ

RSFBLHRVG

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 500mA -55°C ~ 150°C 1.3 V @ 500 mA
RSFJLHRVG

RSFJLHRVG

DIODE GEN PURP 600V 500MA SUBSMA

Taiwan Semiconductor Corporation

3,359 0.18

RFQ

RSFJLHRVG

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 500mA -55°C ~ 150°C 1.3 V @ 500 mA
HS1GL R3G

HS1GL R3G

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation

2,938 0.15

RFQ

HS1GL R3G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 20pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.3 V @ 1 A
RS1K R3G

RS1K R3G

DIODE GEN PURP 800V 1A DO214AC

Taiwan Semiconductor Corporation

3,358 0.16

RFQ

RS1K R3G

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 10pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1A -55°C ~ 150°C 1.3 V @ 1 A
RS1M R3G

RS1M R3G

DIODE GEN PURP 1KV 1A DO214AC

Taiwan Semiconductor Corporation

2,353 0.50

RFQ

RS1M R3G

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 10pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V 1000 V 1A -55°C ~ 150°C 1.3 V @ 1 A
B0520LWF RHG

B0520LWF RHG

DIODE SCHOTTKY 20V 500MA SOD123F

Taiwan Semiconductor Corporation

2,261 0.08

RFQ

B0520LWF RHG

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 250 µA @ 20 V 20 V 500mA -65°C ~ 125°C 385 mV @ 500 mA
B0530WF RHG

B0530WF RHG

DIODE SCHOTTKY 30V 500MA SOD123F

Taiwan Semiconductor Corporation

2,701 0.08

RFQ

B0530WF RHG

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 130 µA @ 30 V 30 V 500mA -65°C ~ 125°C 500 mV @ 500 mA
B0540WF RHG

B0540WF RHG

DIODE SCHOTTKY 40V 500MA SOD123F

Taiwan Semiconductor Corporation

2,750 0.08

RFQ

B0540WF RHG

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 20 µA @ 40 V 40 V 500mA -65°C ~ 150°C 510 mV @ 500 mA
S1DLHRUG

S1DLHRUG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

3,498 0.18

RFQ

S1DLHRUG

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
S1GLHRUG

S1GLHRUG

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation

2,170 0.18

RFQ

S1GLHRUG

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.1 V @ 1 A
S1JLHRUG

S1JLHRUG

DIODE GEN PURP 600V 1A SUB SMA

Taiwan Semiconductor Corporation

3,886 0.18

RFQ

S1JLHRUG

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.1 V @ 1 A
LL4006G L0G

LL4006G L0G

DIODE GEN PURP 800V 1A MELF

Taiwan Semiconductor Corporation

2,618 0.09

RFQ

LL4006G L0G

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 1A (DC) -65°C ~ 150°C 1.1 V @ 1 A
SR515 R0G

SR515 R0G

DIODE SCHOTTKY 150V 5A DO201AD

Taiwan Semiconductor Corporation

3,235 0.19

RFQ

SR515 R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 5A -55°C ~ 150°C 1.05 V @ 5 A
SR520 R0G

SR520 R0G

DIODE SCHOTTKY 200V 5A DO201AD

Taiwan Semiconductor Corporation

2,135 0.19

RFQ

SR520 R0G

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 200 V 200 V 5A -55°C ~ 150°C 1.05 V @ 5 A
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