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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
NXPSC08650DJ

NXPSC08650DJ

DIODE SCHOTTKY 650V 8A DPAK

WeEn Semiconductors

2,587 0.00

RFQ

NXPSC08650DJ

Datasheet

Tape & Reel (TR) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 260pF @ 1V, 1MHz 0 ns 230 µA @ 650 V 650 V 8A 175°C (Max) 1.7 V @ 8 A
NXPSC08650XQ

NXPSC08650XQ

DIODE SCHOTTKY 650V 8A TO220F

WeEn Semiconductors

2,700 0.00

RFQ

NXPSC08650XQ

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 260pF @ 1V, 1MHz 0 ns 230 µA @ 650 V 650 V 8A 175°C (Max) 1.7 V @ 8 A
NXPSC10650BJ

NXPSC10650BJ

DIODE SCHOTTKY 650V 10A D2PAK

WeEn Semiconductors

2,676 0.00

RFQ

NXPSC10650BJ

Datasheet

Tape & Reel (TR) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 300pF @ 1V, 1MHz 0 ns 250 µA @ 650 V 650 V 10A 175°C (Max) 1.7 V @ 10 A
NXPSC10650DJ

NXPSC10650DJ

DIODE SCHOTTKY 650V 10A DPAK

WeEn Semiconductors

2,313 0.00

RFQ

NXPSC10650DJ

Datasheet

Tape & Reel (TR) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 300pF @ 1V, 1MHz 0 ns 250 µA @ 650 V 650 V 10A 175°C (Max) 1.7 V @ 10 A
NXPSC10650XQ

NXPSC10650XQ

DIODE SCHOTTKY 650V 10A TO220F

WeEn Semiconductors

3,233 0.00

RFQ

NXPSC10650XQ

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 300pF @ 1V, 1MHz 0 ns 250 µA @ 650 V 650 V 10A 175°C (Max) 1.7 V @ 10 A
OF4487J

OF4487J

OF4487 DPAK REEL 13" Q1 T1

WeEn Semiconductors

2,141 0.00

RFQ

Tape & Reel (TR) RoHS - - Active - - - - - - - -
BYC30DW-600PQ

BYC30DW-600PQ

BYC30DW-600PQ/TO247/STANDARD MAR

WeEn Semiconductors

2,858 0.00

RFQ

BYC30DW-600PQ

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 33 ns 10 µA @ 600 V 600 V 30A 175°C (Max) 3.3 V @ 30 A
BYC30W-600PT2Q

BYC30W-600PT2Q

BYC30W-600PT2Q/TO247/STANDARD MA

WeEn Semiconductors

2,055 0.00

RFQ

BYC30W-600PT2Q

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 34 ns 10 µA @ 600 V 600 V 30A 175°C (Max) 2.75 V @ 30 A
BYC8-1200PQ

BYC8-1200PQ

BYC8-1200PQ/TO-220AC/STANDARD MA

WeEn Semiconductors

3,998 0.00

RFQ

BYC8-1200PQ

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 55 ns 100 µA @ 1200 V 1200 V 8A 175°C (Max) 3.2 V @ 8 A
BYV40W-600PQ

BYV40W-600PQ

BYV40W-600PQ/TO247/STANDARD MARK

WeEn Semiconductors

2,644 0.00

RFQ

BYV40W-600PQ

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 79 ns 10 µA @ 600 V 600 V 40A 175°C (Max) 1.6 V @ 40 A
BYC15-1200PQ

BYC15-1200PQ

BYC15-1200PQ/TO-220AC/STANDARD M

WeEn Semiconductors

3,737 0.00

RFQ

BYC15-1200PQ

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 61 ns 100 µA @ 1200 V 1200 V 15A 175°C (Max) 3.2 V @ 15 A
BYR5D-1200PJ

BYR5D-1200PJ

BYR5D-1200PDPAK Q1 T1 STANDARD M

WeEn Semiconductors

2,867 0.00

RFQ

BYR5D-1200PJ

Datasheet

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 62 ns 50 µA @ 1200 V 1200 V 5A 175°C (Max) 2.2 V @ 5 A
NXPSC04650DJ

NXPSC04650DJ

DIODE SCHOTTKY 650V 4A DPAK

WeEn Semiconductors

2,274 0.00

RFQ

NXPSC04650DJ

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Surface Mount 130pF @ 1V, 1MHz 0 ns 170 µA @ 650 V 650 V 4A 175°C (Max) 1.7 V @ 4 A
BYV10-600PQ

BYV10-600PQ

DIODE GEN PURP 600V 10A TO220AC

WeEn Semiconductors

3,866 0.79

RFQ

BYV10-600PQ

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 600 V 600 V 10A 175°C (Max) 2 V @ 10 A
BYT79X-600PQ

BYT79X-600PQ

DIODE GEN PURP 600V 15A TO220F

WeEn Semiconductors

4,670 1.12

RFQ

BYT79X-600PQ

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 10 µA @ 600 V 600 V 15A 175°C (Max) 1.38 V @ 15 A
WNSC2D08650TJ

WNSC2D08650TJ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors

3,000 2.66

RFQ

WNSC2D08650TJ

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 260pF @ 1V, 1MHz 0 ns 40 µA @ 650 V 650 V 8A 175°C 1.7 V @ 8 A
BYC15-600PQ

BYC15-600PQ

DIODE GEN PURP 600V 15A TO220AC

WeEn Semiconductors

4,835 1.32

RFQ

BYC15-600PQ

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 18 ns 10 µA @ 600 V 600 V 15A 175°C (Max) 3.2 V @ 15 A
WNSC2D04650XQ

WNSC2D04650XQ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors

3,000 1.49

RFQ

WNSC2D04650XQ

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 125pF @ 1V, 1MHz 0 ns 20 µA @ 650 V 650 V 4A 175°C 1.7 V @ 4 A
WNSC2D10650TJ

WNSC2D10650TJ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors

3,000 2.92

RFQ

WNSC2D10650TJ

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 310pF @ 1V, 1MHz 0 ns 50 µA @ 650 V 650 V 10A 175°C 1.7 V @ 10 A
BYC8-600P,127

BYC8-600P,127

DIODE GEN PURP 600V 8A TO220AC

WeEn Semiconductors

2,878 0.91

RFQ

BYC8-600P,127

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 18 ns 20 µA @ 600 V 600 V 8A 175°C (Max) 1.9 V @ 8 A
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