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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BYW29E-200,127

BYW29E-200,127

DIODE GEN PURP 200V 8A TO220AC

WeEn Semiconductors

9,990 0.98

RFQ

BYW29E-200,127

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 10 µA @ 200 V 200 V 8A 150°C (Max) 1.05 V @ 8 A
BYC10DX-600,127

BYC10DX-600,127

DIODE GEN PURP 500V 10A TO220FP

WeEn Semiconductors

2,276 1.04

RFQ

BYC10DX-600,127

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 18 ns 200 µA @ 600 V 500 V 10A 150°C (Max) 2.5 V @ 10 A
BYC8X-600,127

BYC8X-600,127

DIODE GEN PURP 600V 8A TO220FP

WeEn Semiconductors

3,950 1.20

RFQ

BYC8X-600,127

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 52 ns 150 µA @ 600 V 600 V 8A 150°C (Max) 2.9 V @ 8 A
BYC10-600,127

BYC10-600,127

DIODE GEN PURP 500V 10A TO220AC

WeEn Semiconductors

4,365 1.32

RFQ

BYC10-600,127

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 55 ns 200 µA @ 600 V 500 V 10A 150°C (Max) 2.9 V @ 10 A
BYV79E-200,127

BYV79E-200,127

DIODE GEN PURP 200V 14A TO220AC

WeEn Semiconductors

949 1.25

RFQ

BYV79E-200,127

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 50 µA @ 200 V 200 V 14A 150°C (Max) 1.05 V @ 14 A
BYT79-600,127

BYT79-600,127

DIODE GEN PURP 600V 15A TO220AC

WeEn Semiconductors

312 1.56

RFQ

BYT79-600,127

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 50 µA @ 600 V 600 V 15A 150°C (Max) 1.38 V @ 15 A
WNSC2D201200WQ

WNSC2D201200WQ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors

3,000 8.93

RFQ

WNSC2D201200WQ

Datasheet

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 845pF @ 1V, 1MHz 0 ns 200 µA @ 1200 V 1200 V 20A 175°C 1.8 V @ 20 A
BYC15-600,127

BYC15-600,127

DIODE GEN PURP 500V 15A TO220AC

WeEn Semiconductors

303 1.60

RFQ

BYC15-600,127

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 55 ns 200 µA @ 600 V 500 V 15A 150°C (Max) 2.9 V @ 15 A
WND45P16WQ

WND45P16WQ

STANDARD POWER DIODE

WeEn Semiconductors

2,490 3.21

RFQ

WND45P16WQ

Datasheet

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 1600 V 1600 V 45A 150°C 1.4 V @ 45 A
WNSC2D10650DJ

WNSC2D10650DJ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors

3,349 2.92

RFQ

WNSC2D10650DJ

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 310pF @ 1V, 1MHz 0 ns 50 µA @ 650 V 650 V 10A 175°C 1.7 V @ 10 A
BYC30X-600PSQ

BYC30X-600PSQ

WEEN'S 5TH GENERATION HYPER FAST

WeEn Semiconductors

2,830 1.52

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 10 µA @ 600 V 600 V 30A 175°C 2.75 V @ 30 A
BYV29D-600PJ

BYV29D-600PJ

DIODE GEN PURP 600V 9A DPAK

WeEn Semiconductors

2,941 0.68

RFQ

BYV29D-600PJ

Datasheet

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 75 ns 10 µA @ 600 V 600 V 9A 175°C (Max) 1.3 V @ 8 A
BYC100W-1200PQ

BYC100W-1200PQ

BYC100W-1200P/TO247-2L/STANDARD

WeEn Semiconductors

3,688 4.52

RFQ

BYC100W-1200PQ

Datasheet

Tube EEPP™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 90 ns 250 µA @ 1200 V 1200 V 100A 175°C (Max) 3.3 V @ 100 A
BYC20D-600PQ

BYC20D-600PQ

DIODE GEN PURP 600V 20A TO220AC

WeEn Semiconductors

2,544 0.00

RFQ

BYC20D-600PQ

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 10 µA @ 600 V 600 V 20A 175°C (Max) 2.9 V @ 20 A
NUR460P/L05U

NUR460P/L05U

DIODE GEN PURP 600V 4A DO201AD

WeEn Semiconductors

2,832 0.00

RFQ

NUR460P/L05U

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 75 ns 10 µA @ 1.5 V 600 V 4A - 1.28 V @ 4 A
NUR460P/L06U

NUR460P/L06U

DIODE GEN PURP 600V 4A DO201AD

WeEn Semiconductors

2,529 0.00

RFQ

NUR460P/L06U

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 75 ns 10 µA @ 600 V 600 V 4A - 1.28 V @ 4 A
NUR460P/L07U

NUR460P/L07U

DIODE GEN PURP 600V 4A DO201AD

WeEn Semiconductors

3,152 0.00

RFQ

NUR460P/L07U

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 75 ns 10 µA @ 600 V 600 V 4A - 1.28 V @ 4 A
NUR460PU

NUR460PU

DIODE GEN PURP 600V 4A DO201AD

WeEn Semiconductors

3,128 0.00

RFQ

NUR460PU

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 75 ns 10 µA @ 600 V 600 V 4A - 1.28 V @ 4 A
BYC75W-600PQ

BYC75W-600PQ

DIODE GEN PURP 600V 75A TO247-2

WeEn Semiconductors

3,099 0.00

RFQ

BYC75W-600PQ

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 600 V 600 V 75A 175°C (Max) 2.75 V @ 75 A
BYR16W-1200Q

BYR16W-1200Q

DIODE GEN PURP 1.2KV 16A TO247-2

WeEn Semiconductors

3,335 0.00

RFQ

BYR16W-1200Q

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 105 ns 100 µA @ 1200 V 1200 V 16A 175°C (Max) 2.7 V @ 16 A
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