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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KE12DJ10T52SIC DIODE 1200V 10A TO-252-2 |
2,350 | 3.27 |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | - | Silicon Carbide Schottky | Active | Surface Mount | 660pF @ 0.1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 10A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A | |
|
KE12DJ10T20SIC DIODE 1200V 10A TO-220-2 |
2,803 | 3.29 |
RFQ |
Datasheet |
Tube | RoHS | - | Silicon Carbide Schottky | Active | Through Hole | 660pF @ 0.1V, 1MHz | 0 ns | 100 µA @ 1200 V | 1200 V | 10A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A | |
|
KE12DJ20T20SIC DIODE 1200V 20A TO-220-2 |
590 | 6.62 |
RFQ |
Datasheet |
Tube | RoHS | - | Silicon Carbide Schottky | Active | Through Hole | 1320pF @ 0.1V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 20A (DC) | -55°C ~ 175°C | 1.8 V @ 20 A | |
|
KE12DJ20T63SIC DIODE 1200V 20A TO-263-2 |
600 | 6.68 |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | - | Silicon Carbide Schottky | Active | Surface Mount | 1320pF @ 0.1V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 20A (DC) | -55°C ~ 175°C | 1.8 V @ 20 A | |
|
KE12DJ20T47SIC DIODE 1200V 20A TO-247-2 |
650 | 6.73 |
RFQ |
Datasheet |
Tube | RoHS | - | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | 200 µA @ 1200 V | 1200 V | - | -55°C ~ 175°C | 1.8 V @ 20 A |
