Upload BOM
Shipping address
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N3768RDIODE GEN PURP REV 1KV 35A DO5 |
125 | 13.04 |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1000 V | 35A | -65°C ~ 190°C | 1.2 V @ 35 A | |
|
S85JDIODE GEN PURP 600V 85A DO5 |
160 | 18.32 |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 600 V | 85A | -65°C ~ 180°C | 1.1 V @ 85 A | |
|
S85VRDIODE GEN PURP REV 1.4KV 85A DO5 |
396 | 18.66 |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1400 V | 85A | -65°C ~ 150°C | 1.1 V @ 85 A | |
|
MBR3560RDIODE SCHOTTKY REV 60V DO4 |
101 | 21.48 |
RFQ |
Datasheet |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 1.5 mA @ 20 V | 60 V | 35A | -55°C ~ 150°C | 750 mV @ 35 A | |
|
GD10MPS12A1200V 10A TO-220-2 SIC SCHOTTKY |
3,750 | 5.16 |
RFQ |
Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 367pF @ 1V, 1MHz | 0 ns | 5 µA @ 1200 V | 1200 V | 25A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
GD05MPS17H1700V 5A TO-247-2 SIC SCHOTTKY M |
3,180 | 6.21 |
RFQ |
Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 361pF @ 1V, 1MHz | 0 ns | 5 µA @ 1700 V | 1700 V | 16A (DC) | 175°C | 1.8 V @ 5 A |
|
GB05MPS17-2631700V 5A TO-263-7 SIC SCHOTTKY M |
1,697 | 7.64 |
RFQ |
Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 470pF @ 1V, 1MHz | - | - | 1700 V | 18A (DC) | -55°C ~ 175°C | - |
|
1N1190ARDIODE GEN PURP REV 600V 40A DO5 |
195 | 11.78 |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 600 V | 40A | -65°C ~ 190°C | 1.1 V @ 40 A | |
|
S85JRDIODE GEN PURP REV 600V 85A DO5 |
365 | 18.32 |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 600 V | 85A | -65°C ~ 180°C | 1.1 V @ 85 A | |
|
GD25MPS17H1700V 25A TO-247-2 SIC SCHOTTKY |
378 | 18.60 |
RFQ |
Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1.083nF @ 1V, 1MHz | 0 ns | 5 µA @ 1700 V | 1700 V | 60A (DC) | -55°C ~ 175°C | 1.8 V @ 25 A |
|
GE04MPS06A650V 4A TO-220-2 SIC SCHOTTKY MP |
7,985 | 2.62 |
RFQ |
Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 186pF @ 1V, 1MHz | 0 ns | 5 µA @ 650 V | 650 V | 9A (DC) | -55°C ~ 175°C | 1.35 V @ 4 A |
|
GE06MPS06A650V 6A TO-220-2 SIC SCHOTTKY MP |
3,420 | 2.63 |
RFQ |
Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 279pF @ 1V, 1MHz | - | - | 650 V | 12A (DC) | -55°C ~ 175°C | - |
|
|
GD10MPS12H1200V 10A TO-247-2 SIC SCHOTTKY |
3,046 | 6.37 |
RFQ |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | - | 1200 V | 10A (DC) | 175°C | - | |
|
|
GD30MPS06H650V 30A TO-247-2 SIC SCHOTTKY M |
1,110 | 6.55 |
RFQ |
Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 735pF @ 1V, 1MHz | - | - | 650 V | 49A (DC) | -55°C ~ 175°C | - |
|
|
GD30MPS06A650V 30A TO-220-2 SIC SCHOTTKY M |
1,996 | 6.56 |
RFQ |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | - | 650 V | 30A (DC) | 175°C | - | |
|
|
GE08MPS06A650V 8A TO-220-2 SIC SCHOTTKY MP |
2,000 | 3.02 |
RFQ |
Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 373pF @ 1V, 1MHz | - | - | 650 V | 15A (DC) | -55°C ~ 175°C | - |
|
|
GD30MPS06J650V 30A TO-263-7 SIC SCHOTTKY M |
962 | 7.43 |
RFQ |
Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 735pF @ 1V, 1MHz | - | - | 650 V | 51A (DC) | -55°C ~ 175°C | - |
|
GE10MPS06A650V 10A TO-220-2 SIC SCHOTTKY M |
885 | 3.45 |
RFQ |
Datasheet |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 466pF @ 1V, 1MHz | - | - | 650 V | 19A (DC) | -55°C ~ 175°C | - |
|
GB02SHT03-46DIODE SCHOTTKY 300V 4A |
2,544 | 51.78 |
RFQ |
Datasheet |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 76pF @ 1V, 1MHz | 0 ns | 5 µA @ 300 V | 300 V | 4A (DC) | -55°C ~ 225°C | 1.6 V @ 1 A | |
|
S300YDIODE GEN PURP 1.6KV 300A DO9 |
2,606 | 73.15 |
RFQ |
Datasheet |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 1600 V | 1600 V | 300A | -60°C ~ 180°C | 1.2 V @ 300 A |
