BAV70-QR is a dual high-speed switching diode launched by Nexperia, meeting the AEC-Q101 automotive qualification. Featuring an integrated dual-diode design, it is specifically engineered for signal switching, detection, and clamping scenarios in automotive electronics, adapting to harsh automotive temperature and electromagnetic environments. Below is a detailed description of its core features and technical specifications:

1. Core Functions and Applications

Key RolesThe device integrates two independent high-speed switching diodes, enabling signal routing, polarity conversion, amplitude clamping, and high-frequency detection. With its low forward voltage drop and fast switching characteristics, it is compatible with automotive 3.3V/5V low-voltage systems, making it ideal for sensor signal processing, bus protection, and logic circuit interfaces.

Typical Application Scenarios

In-vehicle sensor modules (e.g., signal conditioning for cameras, millimeter-wave radars, ultrasonic sensors)

CAN/LIN bus signal clamping and polarity correction

Logic interface circuits of Body Electronic Control Units (ECUs)

Signal switching in in-vehicle infotainment systems (e.g., audio/video signal routing)

Reverse current protection in power management modules

2. Key Technical Parameters

2.1 Electrical Characteristics

Peak Reverse Voltage (VR): 60 V (single diode reverse breakdown voltage), meeting overvoltage protection requirements of automotive low-voltage systems.

Continuous Forward Current (IF): 200 mA (@TA=25℃), Peak Forward Current (IFSM): 1 A (10 ms pulse), supporting medium and low-power signal loads.

Forward Voltage Drop (VF): Typical 0.7 V (@IF=10 mA), Maximum 0.85 V (@IF=100 mA), featuring significant low-power performance.

Switching Speed: Reverse Recovery Time (trr) Typical 4 ns (@IF=10 mA, IR=10 μA), compatible with high-frequency signals (supporting above 100 MHz).

ESD Protection Capability: 2000 V HBM (Human Body Model), 1000 V CDM (Charged Device Model), complying with automotive ESD standards.

2.2 Signal Integrity

Junction Capacitance (CJ): Typical 4 pF (@VR=0 V, f=1 MHz), minimizing high-frequency signal attenuation and ensuring signal transmission integrity.

Forward Recovery Time: Negligible (ns level), with no obvious signal delay, suitable for high-speed switching scenarios.

2.3 Physical Characteristics

Package: Compact SOT-23 (TO-236AB), measuring 2.9 mm × 1.3 mm × 1.1 mm, adapting to high-density PCB layouts.

Pin Configuration: 3 pins (Anode 1, Anode 2, Common Cathode), supporting independent dual-channel signal processing or parallel drive enhancement.

Operating Temperature Range: -55°C to +150°C, covering full-scene temperature requirements for automotive engine compartments and cockpits.

3. Technical Advantages

High Integration and Space OptimizationDual diodes integrated in a single SOT-23 package reduce PCB footprint by 50% compared to two discrete diodes, lowering BOM costs and assembly complexity.

Automotive-Grade ReliabilityAEC-Q101 qualified, RoHS and halogen-free compliant, with excellent thermal cycle stability (no failure in -55°C to +150°C cycles) and mechanical stress resistance.

Balance of High Frequency and Low Power Consumption4 ns ultra-fast reverse recovery time adapts to high-frequency signal processing, while 0.7 V low forward voltage drop reduces static power consumption, meeting automotive low-power design requirements.

Flexible AdaptabilityCompatible with replacement needs of mainstream packages such as SOT-23 and SOD-323, enabling direct replacement of traditional dual-diode combinations (e.g., 1N4148 × 2) without modifying PCB designs.

4. Typical Application Circuit and Layout Guidelines

4.1 Circuit Connection

Dual-Channel Signal Clamping: Connect the two anodes to two input signals respectively, and the common cathode to ground or a power supply clamping voltage via a current-limiting resistor to suppress signal overshoot.

Signal Polarity Conversion: Single diode forward conduction realizes forward signal transmission, while reverse cutoff blocks reverse signals; dual diodes enable independent dual-channel polarity control.

Reverse Current Protection: Connect the anode to the load output terminal and the cathode to the positive power supply terminal to prevent device damage from reverse current at the load terminal when the power supply is disconnected.

4.2 PCB Layout Guidelines

Proximity to Signal Source: Place the device close to sensors or interface connectors to shorten signal paths and reduce the impact of parasitic parameters.

Current-Limiting Resistor Matching: Series a 100-1kΩ current-limiting resistor in the clamping circuit to avoid diode burnout due to excessive forward current.

Thermal Design Optimization: Reserve sufficient heat dissipation copper foil (recommended copper area ≥ 3 mm²) when operating current is close to 200 mA to reduce junction temperature.