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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IGOT60R070D1E8220AUMA1GAN HV |
3,614 | 0.00 |
RFQ |
Bulk | CoolGaN™ | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
IGT60R070D1E8220ATMA1GAN HV |
3,749 | 0.00 |
RFQ |
Bulk | CoolGaN™ | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
IGT60R190D1ATMA1GAN HV |
3,902 | 0.00 |
RFQ |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IGO60R070D1E8220AUMA1GAN HV |
2,265 | 0.00 |
RFQ |
Bulk | CoolGaN™ | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
IPD088N06N3GATMA1MOSFET N-CH 60V 50A TO252-3 |
2,402 | 0.00 |
RFQ |
Datasheet |
Tape & Reel (TR) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 8.8mOhm @ 50A, 10V | 4V @ 34µA | 48 nC @ 10 V | ±20V | 3900 pF @ 30 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
BSC0906NSE8189ATMA1MOSFET N-CH 30V TDSON |
3,930 | 0.00 |
RFQ |
Bulk | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 63A (Tc) | 4.5V, 10V | 4.5mOhm @ 30A, 10V | 2V @ 250µA | 18 nC @ 10 V | ±20V | 1200 pF @ 15 V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
IPI032N06N3GE8214AKSA1MOSFET N-CH 60V TO262-3 |
2,029 | 0.00 |
RFQ |
Tube | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 118µA | 165 nC @ 10 V | ±20V | 13000 pF @ 30 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
|
|
IPT039N15N5XTMA1TRENCH >=100V PG-HSOF-8 |
3,043 | 0.00 |
RFQ |
Tape & Reel (TR) | OptiMOS™ | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 150 V | 190A (Tc) | 8V, 10V | 3.9mOhm @ 50A, 10V | 4.6V @ 257µA | 98 nC @ 10 V | ±20V | 7700 pF @ 75 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
|
IPD039N08NF2SATMA1TRENCH 40<-<100V PG-TO252-3 |
2,561 | 0.00 |
RFQ |
Tape & Reel (TR) | * | Discontinued at Mosen | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IAUS300N04S4N007ATMA1MOSFET_(20V 40V) PG-HSOG-8 |
3,677 | 0.00 |
RFQ |
Datasheet |
Tape & Reel (TR) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 300A (Tc) | 10V | 740mOhm @ 100A, 10V | 4V @ 275µA | 342 nC @ 10 V | ±20V | 27356 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IPD053N08NF2SATMA1TRENCH 40<-<100V PG-TO252-3 |
2,703 | 0.00 |
RFQ |
Tape & Reel (TR) | * | Discontinued at Mosen | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IMT65R260M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
3,011 | 0.00 |
RFQ |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IMT65R030M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2,119 | 0.00 |
RFQ |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IMT65R072M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
3,561 | 0.00 |
RFQ |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IMT65R057M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
3,447 | 0.00 |
RFQ |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IMT65R163M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2,551 | 0.00 |
RFQ |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IMT65R107M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2,415 | 0.00 |
RFQ |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IMT65R022M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2,422 | 0.00 |
RFQ |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IMT65R039M1HXTMA1SILICON CARBIDE MOSFET PG-HSOF-8 |
2,866 | 0.00 |
RFQ |
Datasheet |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
BSC0303LSATMA1TRENCH >=100V PG-TDSON-8 |
3,063 | 0.00 |
RFQ |
Datasheet |
Tape & Reel (TR) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 68A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 2.4V @ 72µA | 51 nC @ 10 V | ±20V | 4900 pF @ 60 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
