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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPP65R060CFD7XKSA1650V FET COOLMOS TO247 |
980 | 9.75 |
RFQ |
Datasheet |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 36A (Tc) | 10V | 60mOhm @ 16.4A, 10V | 4.5V @ 860µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IMBG120R090M1HXTMA1SICFET N-CH 1.2KV 26A TO263 |
1,861 | 14.13 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | - | 125mOhm @ 8.5A, 18V | 5.7V @ 3.7mA | 23 nC @ 18 V | +18V, -15V | 763 pF @ 800 V | Standard | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IMBG65R048M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
1,000 | 15.71 |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
IMW65R083M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
162 | 12.65 |
RFQ |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 24A (Tc) | 18V | 111mOhm @ 11.2A, 18V | 5.7V @ 3.3mA | 19 nC @ 18 V | +20V, -2V | 624 pF @ 400 V | - | 104W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
BSD314SPEH6327XTSA1MOSFET P-CH 30V 1.5A SOT363-6 |
14,814 | 0.46 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 4.5V, 10V | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9 nC @ 10 V | ±20V | 294 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IMZA65R083M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
2,928 | 13.60 |
RFQ |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 26A (Tc) | 18V | 111mOhm @ 11.2A, 18V | 5.7V @ 3.3mA | 19 nC @ 18 V | +20V, -2V | 624 pF @ 400 V | - | 104W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
BTS240AHKSA1N-CHANNEL POWER MOSFET |
12,798 | 11.74 |
RFQ |
Datasheet |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IMW65R039M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
133 | 19.90 |
RFQ |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 46A (Tc) | 18V | 50mOhm @ 25A, 18V | 5.7V @ 7.5mA | 41 nC @ 18 V | +20V, -2V | 1393 pF @ 400 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IMZA65R039M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
224 | 20.64 |
RFQ |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 50A (Tc) | 18V | 50mOhm @ 25A, 18V | 5.7V @ 7.5mA | 41 nC @ 18 V | +20V, -2V | 1393 pF @ 400 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IMW65R030M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
131 | 23.35 |
RFQ |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 58A (Tc) | 18V | 42mOhm @ 29.5A, 18V | 5.7V @ 8.8mA | 48 nC @ 18 V | +20V, -2V | 1643 pF @ 400 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IMZA65R030M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
200 | 24.03 |
RFQ |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 53A (Tc) | 18V | 42mOhm @ 29.5A, 18V | 5.7V @ 8.8mA | 48 nC @ 18 V | +20V, -2V | 1643 pF @ 400 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IMW120R020M1HXKSA1SIC DISCRETE |
3,455 | 39.67 |
RFQ |
Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 98A (Tc) | 15V, 18V | 26.9mOhm @ 41A, 18V | 5.2V @ 17.6mA | 83 nC @ 18 V | +20V, -5V | 3460 nF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IRF9332TRPBFMOSFET P-CH 30V 9.8A 8SO |
11,348 | 0.95 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 30 V | 9.8A (Ta) | 4.5V, 10V | 17.5mOhm @ 9.8A, 10V | 2.4V @ 25µA | 41 nC @ 10 V | ±20V | 1270 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRLMS1902TRPBFMOSFET N-CH 20V 3.2A MICRO6 |
5,757 | 0.65 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 20 V | 3.2A (Ta) | 2.7V, 4.5V | 100mOhm @ 2.2A, 4.5V | 700mV @ 250µA (Min) | 7 nC @ 4.5 V | ±12V | 300 pF @ 15 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSP716NH6327XTSA1MOSFET N-CH 75V 2.3A SOT223-4 |
2,547 | 0.68 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 75 V | 2.3A (Ta) | 4.5V, 10V | 160mOhm @ 2.3A, 10V | 1.8V @ 218µA | 13.1 nC @ 10 V | ±20V | 315 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPD70R950CEAUMA1MOSFET N-CH 700V 7.4A TO252-3 |
1,500 | 0.93 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 7.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 150µA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | Super Junction | 68W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7401TRPBFMOSFET N-CH 20V 8.7A 8SO |
8,216 | 1.06 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 20 V | 8.7A (Ta) | 2.7V, 4.5V | 22mOhm @ 4.1A, 4.5V | 700mV @ 250µA (Min) | 48 nC @ 4.5 V | ±12V | 1600 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF7455TRPBFMOSFET N-CH 30V 15A 8SO |
3,831 | 1.53 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 2.8V, 10V | 7.5mOhm @ 15A, 10V | 2V @ 250µA | 56 nC @ 5 V | ±12V | 3480 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSB013NE2LXIXUMA1MOSFET N-CH 25V 36A/163A 2WDSON |
19,409 | 1.95 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 36A (Ta), 163A (Tc) | 4.5V, 10V | 1.3mOhm @ 30A, 10V | 2V @ 250µA | 62 nC @ 10 V | ±20V | 4400 pF @ 12 V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
IRF520NSTRLPBFMOSFET N-CH 100V 9.7A D2PAK |
4,646 | 1.55 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
