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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDM02G120C5XTMA1DIODE SCHOTTKY 1200V 2A TO252-2 |
3,595 | 2.56 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 182pF @ 1V, 1MHz | 0 ns | 18 µA @ 1200 V | 1200 V | 2A (DC) | -55°C ~ 175°C | 1.65 V @ 2 A |
|
IDK02G120C5XTMA1SIC DISCRETE |
781 | 3.15 |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 182pF @ 1V, 1MHz | - | 18 µA @ 1200 V | 1200 V | 11.8A (DC) | -55°C ~ 175°C | 1.65 V @ 2 A | |
|
IDWD10G120C5XKSA1SIC SCHOTTKY 1200V 10A TO247-2 |
3,747 | 7.25 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 730pF @ 1V, 1MHz | 0 ns | 80 µA @ 1200 V | 1200 V | 34A (DC) | -55°C ~ 175°C | 1.65 V @ 10 A |
|
D4600U45X172XPSA1DIODE GP 4500V 4450A D17226K-1 |
2,570 | 4379.76 |
RFQ |
Datasheet |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 25 mA @ 4500 V | 4500 V | 4450A | 140°C (Max) | 2 V @ 2500 A | |
|
BAS2103WE6327HTSA1DIODE GEN PURP 200V 250MA SOD323 |
2,339 | 0.06 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 200 mA | |
|
IDD03SG60CXTMA2DIODE SCHOTTKY 600V 3A TO252-3 |
880 | 2.12 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 60pF @ 1V, 1MHz | 0 ns | 15 µA @ 600 V | 600 V | 3A (DC) | -55°C ~ 175°C | 2.3 V @ 3 A |
|
IDP30E65D2XKSA1DIODE GEN PURP 650V 60A TO220-2 |
2,630 | 1.91 |
RFQ |
Datasheet |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 42 ns | 40 µA @ 650 V | 650 V | 60A (DC) | -40°C ~ 175°C | 2.2 V @ 30 A | |
|
|
IDK06G65C5XTMA2DIODE SCHOTTKY 650V 6A TO263-2 |
3,484 | 3.07 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 190pF @ 1V, 1MHz | 0 ns | 1.1 mA @ 650 V | 650 V | 6A (DC) | -55°C ~ 175°C | 1.8 V @ 6 A |
|
IDD05SG60CXTMA2DIODE SCHOTTKY 600V 5A TO252-3 |
3,781 | 3.17 |
RFQ |
Datasheet |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 110pF @ 1V, 1MHz | 0 ns | 30 µA @ 600 V | 600 V | 5A (DC) | -55°C ~ 175°C | 2.3 V @ 5 A |
|
BAS70E6433HTMA1DIODE SCHOTTKY 70V 70MA SOT23-3 |
2,316 | 0.08 |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 100 ps | 100 nA @ 50 V | 70 V | 70mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA | |
|
IDWD40G120C5XKSA1SIC SCHOTTKY 1200V 40A TO247-2 |
3,814 | 19.72 |
RFQ |
Datasheet |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 2592pF @ 1V, 1MHz | 0 ns | 332 µA @ 1200 V | 1200 V | 110A (DC) | -55°C ~ 175°C | 1.65 V @ 40 A |
|
D1600U45X122XPSA1DIODE GEN PURP D12026K-1 |
2,826 | 2138.83 |
RFQ |
Datasheet |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 150 mA @ 4500 V | 4500 V | 1560A | 140°C (Max) | 4.3 V @ 2500 A | |
|
|
BAS21E6433HTMA1DIODE GEN PURP 200V 250MA SOT23 |
2,421 | 0.03 |
RFQ |
Datasheet |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 200 mA | |
|
|
BAS116E6433HTMA1DIODE GEN PURP 80V 250MA SOT23-3 |
2,344 | 0.02 |
RFQ |
Datasheet |
Tape & Reel (TR),Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Not For New Designs | Surface Mount | 2pF @ 0V, 1MHz | 1.5 µs | 5 nA @ 75 V | 80 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
|
|
IDK04G65C5XTMA2DIODE SCHOTTKY 650V 4A TO263-2 |
3,207 | 1.42 |
RFQ |
Datasheet |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 130pF @ 1V, 1MHz | 0 ns | 670 µA @ 650 V | 650 V | 4A (DC) | -55°C ~ 175°C | 1.8 V @ 4 A |
|
GATELEAD1110008XPSA1HIGH POWER THYR / DIO |
2,697 | 23.33 |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GATELEADMPWHPK1258XXPSA1STD THYR/DIODEN DISC |
2,126 | 23.33 |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GATELEADRD406XPSA1STD THYR/DIODEN DISC |
2,125 | 23.33 |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GATELEADWH406XPSA1STD THYR/DIODEN DISC |
3,242 | 23.33 |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
GATELEADWHBK750XXPSA1STD THYR/DIODEN DISC |
2,477 | 23.33 |
RFQ |
Tray | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
